- 2025-01-07德普微一级代理 DP040N04DTL TO-252 DPMOS N-MOSFET 40V 100A 3.2mΩ
Features•UsesadvancedTrenchMOSFETtechnology•ExtremelylowRDS(on)/HighSpeedPowerSwitching•ExcellentQgxRDS(on)product(FOM)•QualifiedaccordingtoJEDECcriteriaProductSummaryPart#：DP040N04DTLVDS：40VRDS(on).
- 2024-12-24德普微一级代理 DP020N04FGLI DFN5*6 DPMOS N-MOSFET 40V 158A 1.7mΩ
Features• Uses advancedDPMOS2 technology• Better RDS(on) enabled by alow RDSon.sp,low conduction losses• Excellent QgxRDS(on) product(FOM)• Qualifiedaccordingto JEDEC criteriaProduct SummaryApplications• Battery manage
- 2024-12-21德普微一级代理 DP200N25PGNI DP200N25BGNI DPMOS N-MOSFET 250V 67A 17.5mΩ
Features• Uses advancedDPMOS technology• Extremely low on-resistanceRDS(on)• Excellent QgxRDS(on) product(FOM)• Qualifiedaccordingto JEDEC criteriaProduct SummaryApplications• Motor control anddrive• Battery management
- 2024-12-21德普微一级代理 DP200N25PGN DP200N25BGN DPMOS N-MOSFET 250V 67A 17.5mΩ
Features• Uses advancedDPMOS technology• Extremely low on-resistanceRDS(on)• Excellent QgxRDS(on) product(FOM)• Qualifiedaccordingto JEDEC criteriaProduct SummaryApplications• Motor control anddrive• Battery management
- 2024-07-14AT_arc166_c [ARC166C] LU / RD Marking
这种类型的题（对脑电波题）有些题能秒，有些题想多久都想不出来。。。显然本题能一起染黑的边存在某种关系，我们考虑一条边可以和哪两条边一起染色，乍一看如果还没看出来有什么性质，我们就考虑把连着的边再这样考虑一遍。突然，灵光乍现！我们这样连可以连出来个斜线！也就是说我们可以将网格
- 2024-07-11Marking criteria for COMP9444 project
Marking criteria for COMP9444 projectTotal marks for the project work:35 marks.1. Project Notebook(s):20 Marks2. Summary Report (max 4pages): 5 marks3. Project Presentation: 10 MarksBreakdownofmarksforeachcompon